Search results
Results from the WOW.Com Content Network
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
Almost all of today's electronic technology involves the use of semiconductors, with the most important aspect being the integrated circuit (IC), which are found in desktops, laptops, scanners, cell-phones, and other electronic devices. Semiconductors for ICs are mass-produced. To create an ideal semiconducting material, chemical purity is ...
SK Hynix announced that it could produce a 26 nm flash chip with 64 Gb capacity; Intel Corp. and Micron Technology had by then already developed the technology themselves. Announced in 2010. [111] Toshiba announced that it was shipping 24 nm flash memory NAND devices on August 31, 2010. [112]
F 2 is used as a measurement of area for different parts of a semiconductor device, based on the feature size of a semiconductor manufacturing process. Many semiconductor devices are designed in sections called cells, and each cell represents a small part of the device such as a memory cell to store data.
The term solid-state became popular at the beginning of the semiconductor era in the 1960s to distinguish this new technology. A semiconductor device works by controlling an electric current consisting of electrons or holes moving within a solid crystalline piece of semiconducting material such as silicon, while the thermionic vacuum tubes it replaced worked by controlling a current of ...
Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. [1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, [2] now widely used in non-volatile semiconductor memory devices.
Semiconductor device modeling creates models for the behavior of semiconductor devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to capture the electrical behavior of such devices but do not generally ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.