Search results
Results from the WOW.Com Content Network
Avalanche breakdown (or the avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche.
The first paper dealing with avalanche transistors was Ebers & Miller (1955).The paper describes how to use alloy-junction transistors in the avalanche breakdown region in order to overcome speed and breakdown voltage limitations which affected the first models of such kind of transistor when used in earlier computer digital circuits.
For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
In an avalanche photodiode the original charge carrier is created by the absorption of a photon. The impact ionization process is used in modern cosmic dust detectors like the Galileo Dust Detector [ 2 ] and dust analyzers Cassini CDA , [ 3 ] Stardust CIDA and the Surface Dust Analyser [ 4 ] for the identification of dust impacts and the ...
A unidirectional device operates as a rectifier in the forward direction like any other avalanche diode, but is made and tested to handle very large peak currents. A bidirectional transient-voltage-suppression diode can be represented by two mutually opposing avalanche diodes in series with one another and connected in parallel with the circuit ...
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips.
In most cases, this can be easily filtered out by placing a small capacitor in parallel with the VR tube or using an RC decoupling network downstream of the VR tube. Too large a capacitance (>0.1 μF for an 0D3, for instance), however, and the circuit will form a relaxation oscillator , definitely ruining the voltage regulation and possibly ...