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A micrograph of the corner of the photosensor array of a webcam digital camera Image sensor (upper left) on the motherboard of a Nikon Coolpix L2 6 MP. The two main types of digital image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor), fabricated in complementary MOS (CMOS) or N-type MOS (NMOS or Live MOS) technologies.
An active-pixel sensor (APS) is an image sensor, which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. [1] [2] In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as ...
2009 Nobel Prize in Physics laureates George E. Smith and Willard Boyle, 2009, photographed on a Nikon D80, which uses a CCD sensor. The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, [2] with MOS capacitors being the basic building blocks of a CCD, [1] [3] and a depleted MOS structure used as the photodetector in early CCD devices.
The Foveon X3 sensor is a digital camera image sensor designed by Foveon, Inc., (now part of Sigma Corporation) and manufactured by Dongbu Electronics. [1] It uses an array of photosites that consist of three vertically stacked photodiodes .
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
The quantum efficiency of a photodiode is also higher than that of the pixel sensors in a typical CCD or CMOS array. Coupled with the fact that each single-pixel measurement receives about N / 2 {\displaystyle N/2} times more photons than an average pixel sensor, this help reduce image distortion from dark noise and read-out noise significantly.
Incident light generates charge in the capacitors, which is sequentially read and processed to form an image. CCDs are commonly used in digital cameras and scientific imaging applications. CMOS Image Sensors (CIS): CMOS image sensors are based on complementary metal-oxide-semiconductor (CMOS) technology. They integrate photodetectors and signal ...
Sensor size (diagonal) Unit cell size Sensitivity (typical value f / 5.6) Sensor saturation signal (minimum value) Output Subpixel layout Release date Utilizing devices T4K04 [1] 3280 x 2464 8 MP 8 mm (1/3.2") 1.4 μm² CSI-2 4lanes RGB T4K05 [2] 3280 x 2464 8 MP 6.4 mm (1/4") 1.12 μm² CSI-2 4lanes RGB T4K08 [3] 1280 x 720 0.9 MP