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A micrograph of the corner of the photosensor array of a webcam digital camera Image sensor (upper left) on the motherboard of a Nikon Coolpix L2 6 MP. The two main types of digital image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor), fabricated in complementary MOS (CMOS) or N-type MOS (NMOS or Live MOS) technologies.
The active circuitry in CMOS pixels takes some area on the surface which is not light-sensitive, reducing the photon-detection efficiency of the device (microlenses and back-illuminated sensors can mitigate this problem). But the frame-transfer CCD also has about half the non-sensitive area for the frame store nodes, so the relative advantages ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
CMOS cameras have some advantages for electron microscopy compared to CCD cameras. One advantage is that CMOS cameras are less prone than CCD cameras to blooming, i.e. the spreading of charge from oversaturated pixels into nearby pixels. [6] Another advantage is that CMOS cameras can have faster readout speeds. [7]
A high-resolution, compact and low-power ADC suitable for array implementation in standard CMOS, Christer Jansson, IEEE Transactions on circuits and systems - I: Fundamental theory and applications, Vol. 42, No. 11, November 1995.
Superconducting nanowire single-photon detector in the DARPA Quantum Network laboratory at BBN, June 2005. The superconducting nanowire single-photon detector (SNSPD or SSPD) is a type of optical and near-infrared single-photon detector based on a current-biased superconducting nanowire. [1]
2009 Nobel Prize in Physics laureates George E. Smith and Willard Boyle, 2009, photographed on a Nikon D80, which uses a CCD sensor. The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, [2] with MOS capacitors being the basic building blocks of a CCD, [1] [3] and a depleted MOS structure used as the photodetector in early CCD devices.
Usually made in a complementary metal–oxide–semiconductor (CMOS) process, and also known as CMOS image sensors, APSs are commonly used in cell phone cameras, web cameras, and some DSLRs. Cadmium zinc telluride radiation detectors can operate in direct-conversion (or photoconductive) mode at room temperature, unlike some other materials ...