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The static qualifier differentiates SRAM from dynamic random-access memory (DRAM): SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost.
It is a set of small DRAM banks with an SRAM cache in front to make it behave much like a true SRAM. It is used in Nintendo GameCube and Wii video game consoles. Cypress Semiconductor 's HyperRAM [ 66 ] is a type of PSRAM supporting a JEDEC -compliant 8-pin HyperBus [ 67 ] or Octal xSPI interface.
The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Non-volatile RAM has also been developed [ 3 ] and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of ...
[a] DRAM dominates for desktop system memory. SRAM is used for CPU cache. SRAM is also found in small embedded systems requiring little memory. SRAM retains its contents as long as the power is connected and may use a simpler interface, but commonly uses six transistors per bit. Dynamic RAM is more complicated for interfacing and control ...
SRAM is less dense and more expensive per bit than DRAM, but faster and does not require memory refresh. It is used for smaller cache memories in computers. CAM ( Content-addressable memory ) – This is a specialized type in which, instead of accessing data using an address, a data word is applied and the memory returns the location if the ...
SRAM consists of a series of transistors arranged in a flip-flop, which will hold one of two states as long as power is applied. Since the transistors have a very low power requirement, their switching time is very low. However, since an SRAM cell consists of several transistors, typically four or six, its density is much lower than DRAM.
SRAM typically has six-transistor cells, whereas DRAM (dynamic random-access memory) typically has single-transistor cells. [17] [15] In 1965, Toshiba's Toscal BC-1411 electronic calculator used a form of capacitive bipolar DRAM, storing 180-bit data on discrete memory cells, consisting of germanium bipolar transistors and capacitors.
Static random-access memory (SRAM) is electronic memory that does not require refreshing. [2] An SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM; therefore, SRAM circuits require more area on a chip. As a result, data density is much lower in SRAM chips than in DRAM, and gives SRAM a ...