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Symbol for NPN bipolar transistor with current flow direction. Two commonly used HBTs are silicon–germanium and aluminum gallium arsenide, though a wide variety of semiconductors may be used for the HBT structure. HBT structures are usually grown by epitaxy techniques like MOCVD and MBE.
Consider an NPN transistor circuit. During the positive half-cycle of the signal, the base is positive with respect to the emitter and hence the base-emitter junction is forward biased. This causes a base current and much larger collector current to flow. The positive half-cycle of the signal is amplified in the collector.
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c, e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
Current limiter with NPN transistors. The circuit to the left overcomes the thermal problem (see also, current limiting). To see how the circuit works, assume the voltage has just been applied at V+. Current runs through R1 to the base of Q1, turning it on and causing current to begin to flow through the load into the collector of Q1.
As the transistor provides current gain, it facilitates the switching of a relatively large current in the collector by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current.
The expressions are derived for a PNP transistor. For an NPN transistor, n has to be replaced by p, and p has to be replaced by n in all expressions below. The following assumptions are involved when deriving ideal current-voltage characteristics of the BJT [7] Low level injection; Uniform doping in each region with abrupt junctions
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