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For an NPN open emitter output, the collector is connected to the positive voltage rail, so the emitter outputs a high voltage when the transistor is on and is hi-Z when off. For a PNP open emitter output, the collector is connected to the low voltage supply, so the emitter outputs a low voltage when the transistor is on and is hi-Z when off.
A Class B push–pull output driver using a pair of complementary PNP and NPN bipolar junction transistors configured as emitter followers. A push–pull amplifier is a type of electronic circuit that uses a pair of active devices that alternately supply current to, or absorb current from, a connected load. This kind of amplifier can enhance ...
Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
The BC548 is a part of a family of NPN and PNP epitaxial silicon transistors that originated with the metal-cased BC108 family of transistors.The BC548 is the modern plastic-packaged BC108; [6] the BC548 article at the Radiomuseum website [7] describes the BC548 as a successor to the BC238 and differing from the BC108 in only the shape of the package.
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c , e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
Figure 4: NPN voltage follower with current source biasing suitable for integrated circuits. The common collector amplifier's low output impedance allows a source with a large output impedance to drive a small load impedance without changing its voltage. Thus this circuit finds applications as a voltage buffer.
Electric Field Sensor demonstrates extremely high gate impedance with a simple LED circuit; Driving a single MOSFET Detailed description of usage of a similar MOSFET; Datasheets. 2N7000, 200mA, TO-92 case Archived 27 September 2007 at the Wayback Machine, On Semiconductor; BS170, 500mA, TO-92 case Archived 24 October 2020 at the Wayback Machine ...
An infrared proximity sensor Optical proximity sensor in a 2016 Samsung smartphone.A proximity sensor is a standard feature of most smartphones, disabling the touchscreen when positioned near an ear during phone calls; more recent (late 2019-early 2020) smartphones with OLED displays may have the sensor mounted under the display.
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