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Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Operating systems borrow RAM capacity for caching so long as it's not needed by running software. [3] Spare memory can be utilized as RAM drive for temporary high-speed data storage. As shown in the diagram, traditionally there are two more sub-layers of the primary storage, besides main large-capacity RAM:
Operating systems borrow RAM capacity for caching so long as it is not needed by running software. [4] If needed, contents of the computer memory can be transferred to storage; a common way of doing this is through a memory management technique called virtual memory.
A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink Random-access memory ( RAM ; / r æ m / ) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code .
The memory storage capacity for M number of address lines is given by 2 M, which is usually in power of two: 2, 4, 8, 16, 32, 64, 128, 256 and 512 and measured in kilobits, megabits, gigabits or terabits, etc. As of 2014 the largest semiconductor memory chips hold a few gigabits of data, but higher capacity memory is constantly being developed.
A RAM drive (also called a RAM disk) is a block of random-access memory (primary storage or volatile memory) that a computer's software is treating as if the memory were a disk drive (secondary storage). RAM drives provide high-performance temporary storage for demanding tasks and protect non-volatile storage devices from wearing down, since ...
Computer memory used in most contemporary computer systems is built mainly out of DRAM cells; since the layout is much smaller than SRAM, it can be more densely packed yielding cheaper memory with greater capacity. Since the DRAM memory cell stores its value as the charge of a capacitor, and there are current leakage issues, its value must be ...
(memory density) This is the total memory capacity of the chip. Example: 128 Mib. (memory depth) × (memory width) Memory depth is the memory density divided by memory width. Example: for a memory chip with 128 Mib capacity and 8-bit wide data bus, it can be specified as: 16 Meg × 8. Sometimes the "Mi" is dropped, as in 16×8.