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A traditional, front-illuminated digital camera is constructed in a fashion similar to the human eye, with a lens at the front and photodetectors at the back. This traditional orientation of the sensor places the active matrix of the digital camera image sensor—a matrix of individual picture elements—on its front surface and simplifies manufacturing.
Exmor R is a back-illuminated version of Sony's CMOS image sensor. [5] Exmor R was announced by Sony on 11 June 2008 and was the world's first mass-produced implementation of the back-illuminated sensor technology. [6] [non-primary source needed] Sony claims that Exmor R is approximately twice as sensitive as a normal front illuminated sensor.
Photodiodes can be further categorized into: a. PIN Photodiodes: These photodiodes have an additional intrinsic (I) region between the P and N regions, which extends the depletion region and improves the device's performance. b. Schottky Photodiodes: In Schottky photodiodes, a metal-semiconductor junction is used instead of a PN junction.
Avalanche photodiodes are photodiodes with structure optimized for operating with high reverse bias, approaching the reverse breakdown voltage. This allows each photo-generated carrier to be multiplied by avalanche breakdown , resulting in internal gain within the photodiode, which increases the effective responsivity of the device.
A micrograph of the corner of the photosensor array of a webcam digital camera Image sensor (upper left) on the motherboard of a Nikon Coolpix L2 6 MP. The two main types of digital image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor), fabricated in complementary MOS (CMOS) or N-type MOS (NMOS or Live MOS) technologies.
These sensors use one of the following pixel type technologies: FSI: frontside-illuminated.The light that reaches the photosensitive area is reduced because it needs to pass through multiple metal and dielectric layers.
A passive-pixel sensor consists of passive pixels which are read out without amplification, with each pixel consisting of a photodiode and a MOSFET switch. [12] In a photodiode array, pixels contain a p-n junction, integrated capacitor, and MOSFETs as selection transistors. A photodiode array was proposed by G. Weckler in 1968, predating the ...
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