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In electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field.When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they ...
The journal covers the advances in dielectric phenomena and measurements, and electrical insulation. Its editor-in-chief is Michael Wübbenhorst . [1] According to the Journal Citation Reports, the journal has a 2022 impact factor of 3.1. [2]
Dielectric films tend to exhibit greater dielectric strength than thicker samples of the same material. For instance, the dielectric strength of silicon dioxide films of thickness around 1 μm is about 0.5 GV/m. [3] However very thin layers (below, say, 100 nm) become partially conductive because of electron tunneling.
Dielectric charges exert a permanent electrostatic force on the beam. The use of a bipolar NRZ drive voltage instead of a DC drive voltage avoids dielectric charging whereas the electrostatic force exerted on the beam is maintained, because the electrostatic force varies quadratically with the DC drive voltage.
Electrical breakdown in an electric discharge showing the ribbon-like plasma filaments from a Tesla coil.. In electronics, electrical breakdown or dielectric breakdown is a process that occurs when an electrically insulating material (a dielectric), subjected to a high enough voltage, suddenly becomes a conductor and current flows through it.
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide.High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device.
The key steps of the STI process involve etching a pattern of trenches in the silicon, depositing one or more dielectric materials (such as silicon dioxide) to fill the trenches, and removing the excess dielectric using a technique such as chemical-mechanical planarization. [2]
A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor (such as a MOSFET). In state-of-the-art processes, the gate dielectric is subject to many constraints, including: Diagram of silicon dioxide gate dielectric transistor made by Frosch and Derrick in 1957 [1]