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A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
The resonant tunnelling diode makes use of quantum tunnelling in a very different manner to achieve a similar result. This diode has a resonant voltage for which a current favors a particular voltage, achieved by placing two thin layers with a high energy conductance band near each other.
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
The tunnel diode circuit (see diagram) is an example. [82] The tunnel diode TD has voltage controlled negative differential resistance. [ 54 ] The battery V b {\displaystyle V_{b}} adds a constant voltage (bias) across the diode so it operates in its negative resistance range, and provides power to amplify the signal.
Applications of quantum mechanics include explaining phenomena found in nature as well as developing technologies that rely upon quantum effects, like integrated circuits and lasers. [ note 1 ] Quantum mechanics is also critically important for understanding how individual atoms are joined by covalent bonds to form molecules .
Sketch of the current–voltage (I–V) curve of a superconducting tunnel junction. The Cooper pair tunneling current is seen at V = 0, while the quasiparticle tunneling current is seen for V > 2Δ/e and V < -2Δ/e. All currents flowing through the STJ pass through the insulating layer via the process of quantum tunneling. There are two ...
Schematic representation of an electron tunneling through a barrier. In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles) pass through the barrier by the process of quantum tunnelling.
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ( MOSFET ), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics .