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The electron mobility is defined by the equation: =. where: E is the magnitude of the electric field applied to a material,; v d is the magnitude of the electron drift velocity (in other words, the electron drift speed) caused by the electric field, and
Oxide thickness [1] MOSFET logic Researcher(s) Organization Ref; June 1960: 20,000 nm: 100 nm: PMOS: Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [2] [3] NMOS: 10,000 nm: 100 nm: PMOS Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [4] NMOS May 1965: 8,000 nm 150 nm: NMOS Chih-Tang Sah, Otto Leistiko, A.S. Grove ...
For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + (μB) 2), where μ is the semiconductor mobility (units m 2 ·V −1 ·s −1, equivalently m 2 ·Wb −1, or T −1) and B is the magnetic field (units teslas).
In indirect band gap semiconductors, the carrier lifetime strongly depends on the concentration of recombination centers. Gold atoms act as highly efficient recombination centers, silicon for some high switching speed diodes and transistors is therefore alloyed with a small amount of gold. Many other atoms, e.g. iron or nickel, have similar ...
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. [1] This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (Si Ge). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).