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The first DDR4 memory module prototype was manufactured by Samsung and announced in January 2011. [a] Physical comparison of DDR, DDR2, DDR3, and DDR4 SDRAM Front and back of 8 GB [1] DDR4 memory modules. 2005: Standards body JEDEC began working on a successor to DDR3 around 2005, [14] about 2 years before the launch of DDR3 in 2007.
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
DDR4 reached mass market adoption around 2015, which is comparable with the approximately five years taken for DDR3 to achieve mass market transition over DDR2. The DDR4 chips run at 1.2 V or less, [18] [19] compared to the 1.5 V of DDR3 chips, and have in excess of 2 billion data transfers per second.
A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings Example of writable volatile random-access memory: Synchronous dynamic RAM modules, primarily used as main memory in personal computers, workstations, and servers. 8GB DDR3 RAM stick with a white heatsink
Memory clock I/O bus clock Transfer rate Theoretical bandwidth DDR-200, PC-1600 100 MHz 100 MHz 200 MT/s 1.6 GB/s DDR-400, PC-3200 200 MHz 200 MHz 400 MT/s 3.2 GB/s DDR2-800, PC2-6400 200 MHz 400 MHz 800 MT/s 6.4 GB/s DDR3-1600, PC3-12800 200 MHz 800 MHz 1600 MT/s 12.8 GB/s DDR4-2400, PC4-19200 300 MHz 1200 MHz 2400 MT/s 19.2 GB/s
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LPDDR3 went mainstream in 2013, running at 800 MHz DDR (1600 MT/s), offering bandwidth comparable to PC3-12800 notebook memory in 2011 (12.8 GB/s of bandwidth). [11] To achieve this bandwidth, the controller must implement dual-channel memory. For example, this is the case for the Exynos 5 Dual [12] and the 5 Octa. [13]
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