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Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Every single bit in a static RAM chip needs a cell of six transistors, whereas dynamic RAM requires only one capacitor and one transistor. As a result, SRAM is unable to accomplish the storage capabilities of the DRAM family. [3] SRAM is commonly used as CPU cache and for processor registers and in networking devices.
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The two main types of volatile RAM are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, [9] followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. [15] SRAM became an alternative to magnetic-core memory, but required ...
RDRAM is a serial memory bus. DRDRAM was initially expected to become the standard in PC memory, especially after Intel agreed to license the Rambus technology for use with its future chipsets. Further, DRDRAM was expected to become a standard for graphics memory.
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
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