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  2. Electrical breakdown - Wikipedia

    en.wikipedia.org/wiki/Electrical_breakdown

    Electrical breakdown in an electric discharge showing the ribbon-like plasma filaments from a Tesla coil.. In electronics, electrical breakdown or dielectric breakdown is a process that occurs when an electrically insulating material (a dielectric), subjected to a high enough voltage, suddenly becomes a conductor and current flows through it.

  3. Lichtenberg figure - Wikipedia

    en.wikipedia.org/wiki/Lichtenberg_figure

    A useful macroscopic model that combines an electric field with DLA was developed by Niemeyer, Pietronero, and Weismann in 1984, and is known as the dielectric breakdown model (DBM). [7] Although the electrical breakdown mechanisms of air and PMMA plastic are considerably different, the branching discharges turn out to be related.

  4. Dielectric breakdown model - Wikipedia

    en.wikipedia.org/wiki/Dielectric_breakdown_model

    Dielectric breakdown model (DBM) is a macroscopic mathematical model combining the diffusion-limited aggregation model with electric field. It was developed by Niemeyer, Pietronero, and Weismann in 1984. [ 1 ]

  5. Dielectric spectroscopy - Wikipedia

    en.wikipedia.org/wiki/Dielectric_spectroscopy

    Biomedical sensors working in the microwave range relies on dielectric spectroscopy to detect changes in the dielectric properties over a frequency range, such as non-invasive continuous blood glucose monitoring. [37] [38] The IFAC database can be used as a resource to get the dielectric properties for human body tissues. [39]

  6. Partial discharge - Wikipedia

    en.wikipedia.org/wiki/Partial_discharge

    In electrical engineering, partial discharge (PD) is a localized dielectric breakdown (DB) (which does not completely bridge the space between the two conductors) of a small portion of a solid or fluid electrical insulation (EI) system under high voltage (HV) stress.

  7. Time-dependent gate oxide breakdown - Wikipedia

    en.wikipedia.org/wiki/Time-dependent_gate_oxide...

    Intrinsic breakdown is caused by electrical stress induced defect generation. Extrinsic breakdown is caused by defects induced by the manufacturing process. For Integrated circuits, the time to breakdown is dependent on the thickness of the dielectric (gate oxide) and also on the material type, which is dependent on the manufacturing process node.

  8. Dielectric strength - Wikipedia

    en.wikipedia.org/wiki/Dielectric_strength

    Dielectric films tend to exhibit greater dielectric strength than thicker samples of the same material. For instance, the dielectric strength of silicon dioxide films of thickness around 1 μm is about 0.5 GV/m. [3] However very thin layers (below, say, 100 nm) become partially conductive because of electron tunneling.

  9. Breakdown voltage - Wikipedia

    en.wikipedia.org/wiki/Breakdown_voltage

    Breakdown voltage is a characteristic of an insulator that defines the maximum voltage difference that can be applied across the material before the insulator conducts. In solid insulating materials, this usually [citation needed] creates a weakened path within the material by creating permanent molecular or physical changes by the sudden current.