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[4] [5] Silicon photonics 300 mm wafer. Silicon photonic devices can be made using existing semiconductor fabrication techniques, and because silicon is already used as the substrate for most integrated circuits, it is possible to create hybrid devices in which the optical and electronic components are integrated onto a single microchip. [6]
NanoCleave is a technology developed by Silicon Genesis Corporation that separates the silicon via stress at the interface of silicon and silicon-germanium alloy. [18] ELTRAN is a technology developed by Canon which is based on porous silicon and water cut. [19] Seed methods [20] - wherein the topmost Si layer is grown directly on the insulator ...
In this example, the reflectance spectrum of the poly-silicon was measured on a blanket area containing the poly-silicon, from which its n and k spectra were determined in accordance with the methodology described in this article that uses the Forouhi–Bloomer dispersion equations. Fixed tables of n and k values were used for the SiO 2 and Si ...
Some representative refractive indices; Name of material λ (nm) Refractive index no. n Reference Vacuum: 1 (by definition) Air at STP: 1.000273 [citation needed]Gases at 0 °C and 1 atm
In some instances, a high-purity UV grade of fused quartz has been used to make several of the individual uncoated lens elements of special-purpose lenses including the Zeiss 105 mm f/4.3 UV Sonnar, a lens formerly made for the Hasselblad camera, and the Nikon UV-Nikkor 105 mm f/4.5 (presently sold as the Nikon PF10545MF-UV) lens.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
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