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DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm (5¼ inches).
The number of banks is increased to 16, divided into four DDR4-like bank groups; Power-saving improvements: [26] Data-Copy and Write-X (all one or all zero) commands to decrease data transfer; Dynamic frequency and voltage scaling
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
The DDR4 chips run at 1.2 V or less, [18] [19] compared to the 1.5 V of DDR3 chips, and have in excess of 2 billion data transfers per second. They were expected to be introduced at frequency rates of 2133 MHz, estimated to rise to a potential 4266 MHz [ 20 ] and lowered voltage of 1.05 V [ 21 ] by 2013.
DDR4 replaced DDR3 on the Intel X99 LGA 2011 platform, aka Haswell-E, and is also used in AMD's Threadripper platform. [16] DDR3 quad-channel architecture is used in the AMD G34 platform and in the aforementioned Intel CPUs prior to Haswell.
Names Memory clock I/O bus clock Transfer rate Theoretical bandwidth DDR-200, PC-1600 100 MHz 100 MHz 200 MT/s 1.6 GB/s DDR-400, PC-3200 200 MHz
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