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  2. Deal–Grove model - Wikipedia

    en.wikipedia.org/wiki/Deal–Grove_model

    The Deal-Grove model also fails for polycrystalline silicon ("poly-silicon"). First, the random orientation of the crystal grains makes it difficult to choose a value for the linear rate constant. Second, oxidant molecules diffuse rapidly along grain boundaries, so that poly-silicon oxidizes more rapidly than single-crystal silicon. [citation ...

  3. Diffusion equation - Wikipedia

    en.wikipedia.org/wiki/Diffusion_equation

    The diffusion equation is a parabolic partial differential equation. In physics, ... Diffusion Calculator for Impurities & Dopants in Silicon Archived 2009-05-02 at ...

  4. Diffusion current - Wikipedia

    en.wikipedia.org/wiki/Diffusion_current

    Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes). This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.

  5. Spreading resistance profiling - Wikipedia

    en.wikipedia.org/wiki/Spreading_Resistance_Profiling

    In 1970, Solid State Measurements was founded to manufacture spreading resistance profiling tools and in 1974, Solecon Labs was founded to provide spreading resistance profiling services. In 1980, Dickey developed a practical method of determining p- or n-type using the spreading resistance tool.

  6. Convection–diffusion equation - Wikipedia

    en.wikipedia.org/wiki/Convection–diffusion...

    The convection–diffusion equation can be derived in a straightforward way [4] from the continuity equation, which states that the rate of change for a scalar quantity in a differential control volume is given by flow and diffusion into and out of that part of the system along with any generation or consumption inside the control volume: + =, where j is the total flux and R is a net ...

  7. Gate oxide - Wikipedia

    en.wikipedia.org/wiki/Gate_oxide

    Gate oxide at NPNP transistor made by Frosch and Derrick, 1957 [1]. The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.

  8. Numerical solution of the convection–diffusion equation

    en.wikipedia.org/wiki/Numerical_solution_of_the...

    This article describes how to use a computer to calculate an approximate numerical solution of the discretized equation, in a time-dependent situation. In order to be concrete, this article focuses on heat flow, an important example where the convection–diffusion equation applies. However, the same mathematical analysis works equally well to ...

  9. Darken's equations - Wikipedia

    en.wikipedia.org/wiki/Darken's_equations

    Darken’s equations can be applied to almost any scenario involving the diffusion of two different components that have different diffusion coefficients. This holds true except in situations where there is an accompanying volume change in the material because this violates one of Darken’s critical assumptions that atomic volume is constant.