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The diffusion equation is a parabolic partial differential equation. In physics, ... Diffusion Calculator for Impurities & Dopants in Silicon Archived 2009-05-02 at ...
Given these assumptions, the flux of oxidant through each of the three phases can be expressed in terms of concentrations, material properties, and temperature. = = = where: is the gas-phase transport coefficient, is the concentration of oxidant in the surrounding atmosphere, is the concentration of oxidant in the surface of the oxide, is the concentration of the oxidant at the interface ...
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes). This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s). Hole mobilities are generally lower and range from around 100 cm 2 /(V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium. [1]
This article describes how to use a computer to calculate an approximate numerical solution of the discretized equation, in a time-dependent situation. In order to be concrete, this article focuses on heat flow, an important example where the convection–diffusion equation applies. However, the same mathematical analysis works equally well to ...
It is a measure of the rate of heat transfer inside a material and has SI units of m 2 /s. It is an intensive property. Thermal diffusivity is usually denoted by lowercase alpha (α), but a, h, κ , [2] K, [3], D, are also used. The formula is: [4] = where
Formula for the calculation of the Prandtl number of air and water [ edit ] For air with a pressure of 1 bar, the Prandtl numbers in the temperature range between −100 °C and +500 °C can be calculated using the formula given below. [ 2 ]
Gate oxide at NPNP transistor made by Frosch and Derrick, 1957 [1]. The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.