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Some of the address space may be shared between RAM, peripherals, and read-only memory. In the case of a microcontroller with no external RAM, the size of the RAM array is limited by the size of the integrated circuit die. In a packaged system, only enough RAM may be provided for the system's required functions, with no provision for addition ...
The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS
DRAM chips are widely used in digital electronics where low-cost and high-capacity computer memory is required. One of the largest applications for DRAM is the main memory (colloquially called the RAM) in modern computers and graphics cards (where the main memory is called the graphics memory).
For instance, under a 1,066MHz FSB, the only choices regarding memory speed in the MRC are DDR2-667 and DDR2-800. We have to provide additional choices. We have to provide additional choices. For people who want higher memory frequency, we used the setting of 800MHz FSB:DDR2-800 in MRC, but overclocked it to work with a 1,066MHz FSB, so we ...
A SIMM (single in-line memory module) is a type of memory module used in computers from the early 1980s to the early 2000s. It is a printed circuit board on which has random-access memory attached to one or both sides. [ 1 ]
A portion of the computer's hard drive is set aside for a paging file or a scratch partition, and the combination of physical RAM and the paging file form the system's total memory. (For example, if a computer has 2 GB (1024 3 B) of RAM and a 1 GB page file
In DOS memory management, conventional memory, also called base memory, is the first 640 kilobytes of the memory on IBM PC or compatible systems. It is the read-write memory directly addressable by the processor for use by the operating system and application programs.
Memory cells that use fewer than four transistors are possible; however, such 3T [27] [28] or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM). Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M 5 and M 6 in 6T SRAM figure (or M 3 and M 4 in 4T SRAM figure) which, in turn, control ...