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Electro–optics is a branch of electrical engineering, electronic engineering, materials science, and material physics involving components, electronic devices such as lasers, laser diodes, LEDs, waveguides, etc. which operate by the propagation and interaction of light with various tailored materials.
Laser application in astronomical adaptive optics imaging. Different applications need lasers with different output powers. Lasers that produce a continuous beam or a series of short pulses can be compared on the basis of their average power. Lasers that produce pulses can also be characterized based on the peak power of each pulse.
Chemical reaction in a burning jet of ethylene and nitrogen trifluoride (NF 3) Used in research for laser weaponry, operated in continuous-wave mode, can have power in the megawatt range. Deuterium fluoride laser ~3800 nm (3.6 to 4.2 μm) (~90% atm. transmittance) chemical reaction US military laser prototypes. COIL (chemical oxygen–iodine laser)
A vibrometer is generally a two beam laser interferometer that measures the frequency (or phase) difference between an internal reference beam and a test beam. The most common type of laser in an LDV is the helium–neon laser, although laser diodes, fiber lasers, and Nd:YAG lasers are also used.
A distributed feedback (DFB) quantum cascade laser [25] is similar to a Fabry–Pérot laser, except for a distributed Bragg reflector (DBR) built on top of the waveguide to prevent it from emitting at other than the desired wavelength. This forces single mode operation of the laser, even at higher operating currents.
Light is generated in a semiconductor laser by radiative recombination of electrons and holes. In order to generate more light by stimulated emission than is lost by absorption, the system's population density has to be inverted, see the article on lasers. A laser is, thus, always a high carrier density system that entails many-body interactions.
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Diagram of a simple VCSEL structure. The vertical-cavity surface-emitting laser (VCSEL / ˈ v ɪ k s əl /) is a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers (also called in-plane lasers) which emit from surfaces formed by cleaving the individual chip out of a wafer.