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Atomic layer deposition. Schematic illustration of one reaction cycle of the ALD process, using the trimethylaluminium (TMA) -water process to make thin aluminium oxide films as (simplified) example. There, the starting surface contains hydroxyls (OH groups) as reactive sites; Step 1 is the reaction of TMA; Step 2 is a purge or evacuation step ...
Atomic layer epitaxy. Atomic layer epitaxy (ALE), [1] more generally known as atomic layer deposition (ALD), [2] is a specialized form of thin film growth (epitaxy) that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate.
Sequential infiltration synthesis (SIS) is a technique derived from atomic layer deposition (ALD) in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors, allowing precise control over the composition, structure, and properties of product materials. [1][2][3][4][5][6][7] This ...
Atomic layer etching. Atomic layer etching (ALE) is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical modification steps which affect only the top atomic layers of the wafer, and etching steps which remove only the chemically-modified areas, allows the removal of individual atomic ...
ASM's technologies include atomic layer deposition, epitaxy, chemical vapor deposition and diffusion. [1] The company was founded by Arthur del Prado (1931-2016) as 'Advanced Semiconductor Materials' in 1964. [2] From 2008 until 2020, son of Arthur del Prado, Chuck del Prado was CEO.
Deposition is any process that grows, coats, or otherwise transfers a material onto the wafer. Available technologies include physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE), and more recently, atomic layer deposition (ALD) among others.
Many hybrid thin film oxides can be created using atomic layer deposition (ALD) with unique physical, chemical, and electronic properties. For example, a rough oxide layer can be further coated with a smooth oxide layer to provide a required surface texture.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors. [1] MBE is used to make diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such ...