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Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
For an NPN open emitter output, the collector is connected to the positive voltage rail, so the emitter outputs a high voltage when the transistor is on and is hi-Z when off. For a PNP open emitter output, the collector is connected to the low voltage supply, so the emitter outputs a low voltage when the transistor is on and is hi-Z when off.
Thus for example a NPN gate driven by a PNP gate would see the threshold voltage of -6V in the middle of the range of 0V to -12V. Similarly for the PNP gate switching at 0V driven by a range of 6V to -6V. The 1401 used germanium transistors and diodes in its basic gates. [7] The 1401 also added an inductor in series with R2.
An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. The whole ...
In the example of a light-switch circuit, as shown, the resistor is chosen to provide enough base current to ensure the transistor is saturated. [93] The base resistor value is calculated from the supply voltage, transistor C-E junction voltage drop, collector current, and amplification factor beta.
A Class B push–pull output driver using a pair of complementary PNP and NPN bipolar junction transistors configured as emitter followers. A push–pull amplifier is a type of electronic circuit that uses a pair of active devices that alternately supply current to, or absorb current from, a connected load. This kind of amplifier can enhance ...
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c , e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
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