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Zinc oxide is an inorganic compound with the formula Zn O.It is a white powder which is insoluble in water. ZnO is used as an additive in numerous materials and products including cosmetics, food supplements, rubbers, plastics, ceramics, glass, cement, lubricants, [12] paints, sunscreens, ointments, adhesives, sealants, pigments, foods, batteries, ferrites, fire retardants, semi conductors ...
A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the ... ZnO: a = 3.25 c = 5.2: Wurtzite (HCP) [11 ...
ZnO can occupy multiple types of lattices, but is often found in a hexagonal wurtzite structure. In this lattice all of the octahedral sites are empty, hence there is space for intrinsic defects, Zn interstitials, and also external dopants to occupy gaps in the lattice, [1] even when the lattice is at a nanoscale. Zn interstitials occur when ...
The oxide ZnO is a white powder that is nearly insoluble in neutral aqueous solutions, but is amphoteric, dissolving in both strong basic and acidic solutions. [50] The other chalcogenides (ZnS, ZnSe, and ZnTe) have varied applications in electronics and optics. [62] Pnictogenides (Zn 3 N 2, Zn 3 P 2, Zn 3 As 2 and Zn 3 Sb 2), [63] [64] the ...
where E(k) is the energy of an electron at wavevector k in that band, E 0 is a constant giving the edge of energy of that band, and m * is a constant (the effective mass). It can be shown that the electrons placed in these bands behave as free electrons except with a different mass, as long as their energy stays within the range of validity of ...
The Born–Landé equation is a means of calculating the lattice energy of a crystalline ionic compound.In 1918 [1] Max Born and Alfred Landé proposed that the lattice energy could be derived from the electrostatic potential of the ionic lattice and a repulsive potential energy term.
Lattice constants of the compounds also tend to be different, and the lattice mismatch against the substrate, dependent on the mixing ratio, causes defects in amounts dependent on the mismatch magnitude; this influences the ratio of achievable radiative/nonradiative recombinations and determines the luminous efficiency of the device.
Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film transistors (TFT) are used in the TFT backplane of flat-panel displays (FPDs).