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The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of the mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages.
RAM (Random-access memory) – This has become a generic term for any semiconductor memory that can be written to, as well as read from, in contrast to ROM (below), which can only be read. All semiconductor memory, not just RAM, has the property of random access .
in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...
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Peak Inrush Current Into Powerline Capacitors Increases with Power-up dV/dT 11,000 μF Powerline Capacitor Peak Inrush Current at Power-Up of a 15 A Feed 1 ms 10 ms 100 ms 1 s v = 28 V 310 A 31 A 3.1 A 0.31 A v = 610 V 6710 A 671A 67A 7A
The data in DRAM chips is stored as electric charge in tiny capacitors in the memory cells. The read operation depletes the charge in a cell, destroying the data, so after the data is read out the sense amplifier must immediately write it back in the cell by applying a voltage to it, recharging the capacitor. This is called memory refresh.
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