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The chemical inertness and very high melting point of tantalum make it valuable for laboratory and industrial equipment such as reaction vessels and vacuum furnaces. It is used in tantalum capacitors for electronic equipment such as computers. It is being investigated for use as a material for high-quality superconducting resonators in quantum ...
Tantalum electrolytic capacitors are extensively used in electronic devices that require stable capacitance, low leakage current, and where reliability is crucial. [1] Due to its reliability, durability and performance under extreme conditions, it is used in medical equipment, [ 2 ] aerospace and military applications. [ 3 ]
used for puncturing into the spine (or cisterns or fontanelles of a new born) for cerebro-spinal fluid aspiration or for injection drugs, specially anesthetics in spinal blocks, epidurals, etc. Ryle's tube or Nasogastric tube: used for nasogastric suction of ingested toxins (or at times introduction of food or drugs). video link
Tantalum carbide is widely used as sintering additive in ultra-high temperature ceramics (UHTCs) or as a ceramic reinforcement in high-entropy alloys (HEAs) due to its excellent physical properties in melting point, hardness, elastic modulus, thermal conductivity, thermal shock resistance, and chemical stability, which makes it a desirable ...
historically, used in human or animal experiments to measure and record data Long extension kymograph: historically, used in or human animal experiments to measure and record data Surface plasmon resonance: Label-free detection of molecule binding. Used to determine kinetic constants of the interaction (k a, k d, K D). Can also be used for ...
Tantalum ores often contain significant amounts of niobium, which is itself a valuable metal.As such, both metals are extracted so that they may be sold. The overall process is one of hydrometallurgy and begins with a leaching step; in which the ore is treated with hydrofluoric acid and sulfuric acid to produce water-soluble hydrogen fluorides, such as the heptafluorotantalate.
Tantalum boride films can be deposited from a gas mixture of TaCl 5-BCl 3-H 2-Ar in the temperature range 540–800 °C. TaB 2 (single-phase) is deposited at a source gas flow ratio (BCl 3 /TaCl 5) of six and a temperature above 600 °C. TaB (single-phase) is deposited at BCl 3 /TaCl 5 = 2–4 and T = 600–700 °C. [1]
2 Ta + 10 HCl → 2 TaCl 5 + 5 H 2. It can also be prepared by a reaction between tantalum pentoxide and thionyl chloride at 240 °C Ta 2 O 5 + 5 SOCl 2 → 2 TaCl 5 + 5 SO 2. Tantalum pentachloride is commercially available, however samples can be contaminated with tantalum(V) oxychloride (TaOCl 3), formed by hydrolysis.