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Buffered oxide etch. Buffered oxide etch (BOE), also known as buffered HF or BHF, is a wet etchant used in microfabrication. It is a mixture of a buffering agent, such as ammonium fluoride NH4F, and hydrofluoric acid (HF). Its primary use is in etching thin films of silicon nitride (Si 3 N 4) or silicon dioxide (SiO 2), by the reaction:
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which ...
Wet etching tanks. It is used in the semiconductor industry as a major component of Wright etch and buffered oxide etch, which are used to clean silicon wafers. In a similar manner it is also used to etch glass by treatment with silicon dioxide to form gaseous or water-soluble silicon fluorides. It can also be used to polish and frost glass. [5]
The wet etching of SiO 2 in buffered hydrogen fluoride solutions is a common and well understood process in micro fabrication. In 1966, Holmes and Snell found that SiO 2 can be etched in hydrogen fluoride vapor. [2]
Ammonium fluoride is a critical component of buffered oxide etch (BOE), a wet etchant used in microfabrication. It acts as the buffering agent in a solution of concentrated HF, creating an etchant with a more controllable rate of etching (than that of simple concentrated HF solutions). [6]
Wright etch. The Wright etch (also Wright-Jenkins etch) is a preferential etch for revealing defects in <100>- and <111>-oriented, p- and n-type silicon wafers used for making transistors, microprocessors, memories, and other components. Revealing, identifying, and remedying such defects is essential for progress along the path predicted by ...
The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America. [1][2][3] It involves the following ...
Isotropic etching. Isotropic etching is a method commonly used in semiconductors to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma -phase, [1] although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide etching are more often used.