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The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...
anode, gate, cathode. Electronic symbol. A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric. [1] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
TRIAC. For other uses, see Triac. A TRIAC (triode for alternating current; also bidirectional triode thyristor or bilateral triode thyristor[ 1 ]) is a three-terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark. TRIACs are a subset of thyristors (analogous to a relay ...
A thyristor controlled reactor is usually a three-phase assembly, normally connected in a delta arrangement to provide partial cancellation of harmonics. Often the main TCR reactor is split into two halves, with the thyristor valve connected between the two halves. This protects the vulnerable thyristor valve from damage due to flashovers ...
Electronic symbol. The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. [1] Like the GTO thyristor, the IGCT is a fully controllable power switch ...
As of 2009 it was expected that these high-power silicon "self-commutating switches", in particular IGBTs and a variant thyristor (related to the GTO) called the integrated gate-commutated thyristor (IGCT), would be scaled-up in power rating to the point that they would eventually replace simple thyristor-based AC rectification systems for the ...
Thyristor: The thyristor is a family of three-terminal devices that include SCRs, GTOs, and MCT. For most of the devices, a gate pulse turns the device on. The device turns off when the anode voltage falls below a value (relative to the cathode) determined by the device characteristics. When off, it is considered a reverse voltage blocking ...