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  2. Thyristor - Wikipedia

    en.wikipedia.org/wiki/Thyristor

    The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.

  3. Gate turn-off thyristor - Wikipedia

    en.wikipedia.org/wiki/Gate_turn-off_thyristor

    anode, gate, cathode. Electronic symbol. A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric. [1] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.

  4. Integrated gate-commutated thyristor - Wikipedia

    en.wikipedia.org/wiki/Integrated_gate-commutated...

    Electronic symbol. The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. [1] Like the GTO thyristor, the IGCT is a fully controllable power switch ...

  5. Silicon controlled rectifier - Wikipedia

    en.wikipedia.org/wiki/Silicon_controlled_rectifier

    A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...

  6. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    Working principle‍. Semiconductor. Invented. 1959. Electronic symbol. IGBT schematic symbol. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) [ 1 ][ 2 ...

  7. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    Contents. Power semiconductor device. A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation ...

  8. TRIAC - Wikipedia

    en.wikipedia.org/wiki/TRIAC

    TRIAC. For other uses, see Triac. A TRIAC (triode for alternating current; also bidirectional triode thyristor or bilateral triode thyristor[ 1 ]) is a three-terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark. TRIACs are a subset of thyristors (analogous to a relay ...

  9. Thyratron - Wikipedia

    en.wikipedia.org/wiki/Thyratron

    Reference 2D21 tube is 2 ⅛ inches tall (54 mm). A thyratron is a type of gas-filled tube used as a high-power electrical switch and controlled rectifier. Thyratrons can handle much greater currents than similar hard-vacuum tubes. Electron multiplication occurs when the gas becomes ionized, producing a phenomenon known as a Townsend discharge.