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  2. Silicon controlled rectifier - Wikipedia

    en.wikipedia.org/wiki/Silicon_controlled_rectifier

    A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...

  3. Thyristor - Wikipedia

    en.wikipedia.org/wiki/Thyristor

    The silicon controlled rectifier (SCR) or thyristor proposed by William Shockley in 1950 and championed by Moll and others at Bell Labs was developed in 1956 by power engineers at General Electric (GE), led by Gordon Hall and commercialized by GE's Frank W. "Bill" Gutzwiller.

  4. Rectifier - Wikipedia

    en.wikipedia.org/wiki/Rectifier

    Physically, rectifiers take a number of forms, including vacuum tube diodes, wet chemical cells, mercury-arc valves, stacks of copper and selenium oxide plates, semiconductor diodes, silicon-controlled rectifiers and other silicon-based semiconductor switches.

  5. Thyratron - Wikipedia

    en.wikipedia.org/wiki/Thyratron

    Reference 2D21 tube is 2 ⅛ inches tall (54 mm). A thyratron is a type of gas-filled tube used as a high-power electrical switch and controlled rectifier. Thyratrons can handle much greater currents than similar hard-vacuum tubes. Electron multiplication occurs when the gas becomes ionized, producing a phenomenon known as a Townsend discharge.

  6. Latch-up - Wikipedia

    en.wikipedia.org/wiki/Latch-up

    In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low-impedance path between the power supply rails of a MOSFET circuit, triggering a parasitic structure which disrupts proper functioning of the part, possibly even leading to its destruction due to overcurrent.

  7. Gate turn-off thyristor - Wikipedia

    en.wikipedia.org/wiki/Gate_turn-off_thyristor

    anode, gate, cathode. Electronic symbol. A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric. [1] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.

  8. TRIAC - Wikipedia

    en.wikipedia.org/wiki/TRIAC

    TRIACs are a subset of thyristors (analogous to a relay in that a small voltage and current can control a much larger voltage and current) and are related to silicon controlled rectifiers (SCRs). TRIACs differ from SCRs in that they allow current flow in both directions, whereas an SCR can only conduct current in a single direction.

  9. Transient-voltage-suppression diode - Wikipedia

    en.wikipedia.org/wiki/Transient-voltage...

    Transient-voltage-suppression diode. TVS diode. STMicroelectronics Transil TVS devices. Type. Passive. Working principle‍. avalanche breakdown. Electronic symbol. A transient-voltage-suppression (TVS) diode, also transil, transorb or thyrector, is an electronic component used to protect electronics from voltage spikes induced on connected wires.