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  2. Silicon controlled rectifier - Wikipedia

    en.wikipedia.org/wiki/Silicon_controlled_rectifier

    A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...

  3. Thyristor - Wikipedia

    en.wikipedia.org/wiki/Thyristor

    The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.

  4. Rectifier - Wikipedia

    en.wikipedia.org/wiki/Rectifier

    t. e. A rectifieris an electrical device that converts alternating current(AC), which periodically reverses direction, to direct current(DC), which flows in only one direction. The process is known as rectification, since it "straightens" the direction of current.

  5. Power electronics - Wikipedia

    en.wikipedia.org/wiki/Power_electronics

    In 1956, the silicon controlled rectifier (SCR) was introduced by General Electric, greatly increasing the range of power electronics applications. [3] By the 1960s, the improved switching speed of bipolar junction transistors had allowed for high frequency DC/DC converters. R. D. Middlebrook made important contributions to power electronics.

  6. TRIAC - Wikipedia

    en.wikipedia.org/wiki/TRIAC

    TRIACs are a subset of thyristors (analogous to a relay in that a small voltage and current can control a much larger voltage and current) and are related to silicon controlled rectifiers (SCRs). TRIACs differ from SCRs in that they allow current flow in both directions, whereas an SCR can only conduct current in a single direction.

  7. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    Up to 3000 amperes and 5000 volts in a single silicon device. High voltage requires multiple series silicon devices. Silicon-controlled rectifier (SCR) This semi-controlled device turns on when a gate pulse is present and the anode is positive compared to the cathode. When a gate pulse is present, the device operates like a standard diode.

  8. Diode - Wikipedia

    en.wikipedia.org/wiki/Diode

    Electron flow is the reverse of conventional current flow. [1][2][3] A diode is a two- terminal electronic component that conducts current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction and high (ideally infinite) resistance in the other.

  9. Power inverter - Wikipedia

    en.wikipedia.org/wiki/Power_inverter

    There are two basic designs for ... it was the 1957 introduction of the thyristor or silicon-controlled rectifier ... When controlled rectifier circuits are operated ...

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