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List of free analog and digital electronic circuit simulators, available for Windows, macOS, Linux, and comparing against UC Berkeley SPICE. The following table is split into two groups based on whether it has a graphical visual interface or not.
An N-MOSFET/IGBT needs a significantly positive charge (V GS > V th) applied to the gate in order to turn on. Using only N-channel MOSFET/IGBT devices is a common cost reduction method due largely to die size reduction (there are other benefits as well). However, using nMOS devices in place of pMOS devices means that a voltage higher than the ...
In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example).
It offers the ability to set up a circuit with a graphical user interface and simulate the large-signal, small-signal and noise behaviour of the circuit. Originally, Qucs was composed of a circuit simulator "qucs-core", now Qucsator, and a GUI for schematic entry and plotting. The usage patterns, as well as the emphasis on RF design, were ...
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer.. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor.
GNU Circuit Analysis Package (Gnucap) is a general purpose circuit simulator started by Albert Davis [1] in 1993. [2] It is part of the GNU Project. [3] The latest stable version is 0.35 from 2006. The latest development snapshot (as of July 2023) is from June 2023 and is usable.
A MOSFET can be made to operate as a resistor, so the whole circuit can be made with n-channel MOSFETs only. NMOS circuits are slow to transition from low to high. When transitioning from high to low, the transistors provide low resistance, and the capacitive charge at the output drains away very quickly (similar to discharging a capacitor ...
MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit; The main disadvantages of these FETs over bipolar transistors in switching are the following: