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Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula SiO 2, commonly found in nature as quartz. [ 5 ] [ 6 ] In many parts of the world, silica is the major constituent of sand .
velocity in terms of the speed of light c: unitless beta particle: gamma: Lorentz factor: unitless photon: gamma ray: shear strain: radian heat capacity ratio: unitless surface tension: newton per meter (N/m) delta: change in a variable (e.g. ) unitless Laplace operator: per square meter (m −2)
A branch of physics that studies atoms as isolated systems of electrons and an atomic nucleus. Compare nuclear physics. atomic structure atomic weight (A) The sum total of protons (or electrons) and neutrons within an atom. audio frequency A periodic vibration whose frequency is in the band audible to the average human, the human hearing range.
The key steps of the STI process involve etching a pattern of trenches in the silicon, depositing one or more dielectric materials (such as silicon dioxide) to fill the trenches, and removing the excess dielectric using a technique such as chemical-mechanical planarization. [2]
Silicon dioxide or quartz, SiO 2, very well characterized; Silicon monoxide, SiO, not very well characterized ... additional terms may apply. By using this site, ...
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide.High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device.
The rad is a unit of absorbed radiation dose, defined as 1 rad = 0.01 Gy = 0.01 J/kg. [1] It was originally defined in CGS units in 1953 as the dose causing 100 ergs of energy to be absorbed by one gram of matter.
Silicon dioxide (usually called simply "oxide" in the semiconductor industry) may be deposited by several different processes. Common source gases include silane and oxygen, dichlorosilane (SiCl 2 H 2) and nitrous oxide [16] (N 2 O), or tetraethylorthosilicate (TEOS; Si(OC 2 H 5) 4). The reactions are as follows: [17] SiH 4 + O 2 → SiO 2 + 2 H 2