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  2. Zinc selenide - Wikipedia

    en.wikipedia.org/wiki/Zinc_selenide

    Zinc selenide is the inorganic compound with the formula ZnSe. It is a lemon-yellow solid although most samples have a duller color due to the effects of oxidation. It is an intrinsic semiconductor with a band gap of about 2.70 eV at 25 °C (77 °F), equivalent to a wavelength of 459 nm.

  3. List of laser types - Wikipedia

    en.wikipedia.org/wiki/List_of_laser_types

    Laser types with distinct laser lines are shown above the wavelength bar, while below are shown lasers that can emit in a wavelength range. The height of the lines and bars gives an indication of the maximal power/pulse energy commercially available, while the color codifies the type of laser material (see the figure description for details).

  4. List of semiconductor materials - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

  5. Supercontinuum - Wikipedia

    en.wikipedia.org/wiki/Supercontinuum

    On the right, the spectrum of the supercontinuum is shown after the output beam passed through a prism. The higher the pump intensity, the broader the supercontinuum. The pump laser is an 800nm femtosecond laser. In the decade leading up to 2014, the development of supercontinua sources emerged as a research field. [2]

  6. Laser damage threshold - Wikipedia

    en.wikipedia.org/wiki/Laser_damage_threshold

    The laser damage threshold (LDT) or laser induced damage threshold (LIDT) is the limit at which an optic or material will be damaged by a laser given the fluence (energy per area), intensity (power per area), and wavelength. LDT values are relevant to both transmissive and reflective optical elements and in applications where the laser induced ...

  7. Czochralski method - Wikipedia

    en.wikipedia.org/wiki/Czochralski_method

    High-purity, semiconductor-grade silicon (only a few parts per million of impurities) is melted in a crucible at 1,425 °C (2,597 °F; 1,698 K), usually made of quartz. Dopant impurity atoms such as boron or phosphorus can be added to the molten silicon in precise amounts to dope the silicon, thus changing it into p-type or n-type silicon, with ...

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