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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
Cray had intended to use gallium arsenide circuitry in the Cray-2, which would not only offer much higher switching speeds but also used less energy and thus ran cooler as well. At the time the Cray-2 was being designed, the state of GaAs manufacturing simply was not up to the task of supplying a supercomputer. [ 9 ]
Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
In the example of gallium and arsenic, single-crystal gallium arsenide is formed. When evaporation sources such as copper or gold are used, the gaseous elements impinging on the surface may be adsorbed (after a time window where the impinging atoms will hop around the surface) or reflected. Atoms on the surface may also desorb.
Arsenic is used as the group 15 element in the III-V semiconductors gallium arsenide, indium arsenide, and aluminium arsenide. [10] The valence electron count of GaAs is the same as a pair of Si atoms, but the band structure is completely different which results in distinct bulk properties. [11]
Gallium arsenide (GaAs) features isolated arsenic centers with a zincblende structure (wurtzite structure can eventually also form in nanostructures), and with predominantly covalent bonding – it is a III–V semiconductor.
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The compound trimethylgallium is of some relevance to MOCVD as a precursor to gallium arsenide via its reaction with arsine at 700 °C: Ga(CH 3) 3 + AsH 3 → GaAs + 3CH 4. Gallium trichloride is an important reagent for the introduction of gallium into organic compounds.