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  2. Gallium arsenide - Wikipedia

    en.wikipedia.org/wiki/Gallium_arsenide

    Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.

  3. Hybrid silicon laser - Wikipedia

    en.wikipedia.org/wiki/Hybrid_silicon_laser

    A hybrid silicon laser is an optical source that is fabricated from both silicon and group III-V semiconductor materials (e.g. Indium(III) phosphide, Gallium(III) arsenide). It comprises a silicon waveguide fused to an active, light-emitting, III-V epitaxial semiconductor wafer.

  4. List of semiconductor materials - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

  5. Britain buys semiconductor factory to secure supply for military

    www.aol.com/britain-buys-semiconductor-factory...

    LONDON (Reuters) -The British government has bought a struggling factory from the U.S. firm Coherent Inc. to secure domestic manufacture of gallium arsenide semiconductors, used in military ...

  6. RTX's Raytheon Secures DARPA Contract To Develop Ultra-Wide ...

    www.aol.com/rtxs-raytheon-secures-darpa-contract...

    On Wednesday, RTX Corporation (NYSE:RTX) said Raytheon has secured a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors. These will be based on ...

  7. IQE - Wikipedia

    en.wikipedia.org/wiki/IQE

    IQE produces epitaxail wafers from gallium arsenide (GaAs), gallium nitride (GaN) as well as indium phosphide (InP) and silicon. The wafers made from GaAs and GaN have a diameter of 8 inches and can be used for MicroLED displays, while the 6 inch InP wafers are aimed at electro-optic devices.

  8. Wafer (electronics) - Wikipedia

    en.wikipedia.org/wiki/Wafer_(electronics)

    Gallium arsenide (GaAs), a III-V semiconductor produced via the Czochralski method, gallium nitride (GaN) and silicon carbide (SiC) are also common wafer materials, with GaN and sapphire being extensively used in LED manufacturing.

  9. Semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device

    Gallium arsenide (GaAs) is also widely used in high-speed devices but so far, it has been difficult to form large-diameter boules of this material, limiting the wafer diameter to sizes significantly smaller than silicon wafers thus making mass production of GaAs devices significantly more expensive than silicon.

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