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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
A hybrid silicon laser is an optical source that is fabricated from both silicon and group III-V semiconductor materials (e.g. Indium(III) phosphide, Gallium(III) arsenide). It comprises a silicon waveguide fused to an active, light-emitting, III-V epitaxial semiconductor wafer.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
LONDON (Reuters) -The British government has bought a struggling factory from the U.S. firm Coherent Inc. to secure domestic manufacture of gallium arsenide semiconductors, used in military ...
On Wednesday, RTX Corporation (NYSE:RTX) said Raytheon has secured a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors. These will be based on ...
IQE produces epitaxail wafers from gallium arsenide (GaAs), gallium nitride (GaN) as well as indium phosphide (InP) and silicon. The wafers made from GaAs and GaN have a diameter of 8 inches and can be used for MicroLED displays, while the 6 inch InP wafers are aimed at electro-optic devices.
Gallium arsenide (GaAs), a III-V semiconductor produced via the Czochralski method, gallium nitride (GaN) and silicon carbide (SiC) are also common wafer materials, with GaN and sapphire being extensively used in LED manufacturing.
Gallium arsenide (GaAs) is also widely used in high-speed devices but so far, it has been difficult to form large-diameter boules of this material, limiting the wafer diameter to sizes significantly smaller than silicon wafers thus making mass production of GaAs devices significantly more expensive than silicon.
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