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A variety of silicon diodes of different current ratings. At left is a bridge rectifier. On the 3 center diodes, a painted band identifies the cathode terminal. Silicon diodes are the most widely used rectifiers for lower voltages and powers, and have largely replaced other rectifiers. Due to their substantially lower forward voltage (0.3V ...
In power supply design, a bridge circuit or bridge rectifier is an arrangement of diodes or similar devices used to rectify an electric current, i.e. to convert it from an unknown or alternating polarity to a direct current of known polarity. In some motor controllers, an H-bridge is used to control the direction the motor turns.
Using these ideal diodes rather than standard diodes for solar electric panel bypass, reverse-battery protection, or bridge rectifiers reduces the amount of power dissipated in the diodes, improving efficiency and reducing the size of the circuit board and the weight of the heat sink required to deal with the power dissipation.
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
A hand-made diode bridge. The silver band on the diodes indicates the cathode side of the diode.. A diode bridge is a bridge rectifier circuit of four diodes that is used in the process of converting alternating current (AC) from the input terminals to direct current (DC, i.e. fixed polarity) on the output terminals.
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor .
From the rectifier article: "the difference between the term diode and the term rectifier is merely one of usage, e.g. the term rectifier describes a diode that is being used to convert AC to DC.". The rectifer article goes on to describe the *process* of rectification with passing reference to "point contact rectifiers or crystal detectors".
Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.
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