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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
The carrier concentration can be calculated by treating electrons moving back and forth across the bandgap just like the equilibrium of a reversible reaction from chemistry, leading to an electronic mass action law. The mass action law defines a quantity called the intrinsic carrier concentration, which for undoped materials:
Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards [2] the preferred nomenclature for the alloy is Ga x In 1-x As where the group-III elements appear in order of increasing atomic number, as in the related alloy system Al x Ga 1-x As.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Quantum wells are formed in semiconductors by having a material, like gallium arsenide, sandwiched between two layers of a material with a wider bandgap, like aluminum arsenide. (Other examples: a layer of indium gallium nitride sandwiched between two layers of gallium nitride.)
Indium gallium arsenide (In 0.53 Ga 0.47 As) is lattice matched to Indium Phosphide with a band gap of 0.74 eV. A quaternary alloy of indium gallium arsenide phosphide can be lattice matched for any band gap in between the two. [citation needed] Indium phosphide-based cells have the potential to work in tandem with gallium arsenide cells.
InP is used as a substrate for epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors that could operate at 604 GHz. [10]
Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor , gallium arsenide, (chemical formula GaAs ), and readily compatible with existing semiconductor technologies.