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  2. Depletion and enhancement modes - Wikipedia

    en.wikipedia.org/wiki/Depletion_and_enhancement...

    In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3 V negative (the drain, by ...

  3. Depletion-load NMOS logic - Wikipedia

    en.wikipedia.org/wiki/Depletion-load_NMOS_logic

    Depletion-mode n-type MOSFETs as load transistors allow single voltage operation and achieve greater speed than possible with pure enhancement-load devices. This is partly because the depletion-mode MOSFETs can be a better current source approximation than the simpler enhancement-mode transistor can, especially when no extra voltage is ...

  4. File:MOSFET depletion-mode n-channel en.svg - Wikipedia

    en.wikipedia.org/wiki/File:MOSFET_depletion-mode...

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  5. File:MOSFET depletion-mode n-channel.svg - Wikipedia

    en.wikipedia.org/wiki/File:MOSFET_depletion-mode...

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  6. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that flow through the channel; similarly, the drain is where the charge carriers leave the channel.

  7. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    In an n-channel "depletion-mode" device, a negative gate-to-source voltage causes a depletion region to expand in width and encroach on the channel from the sides, narrowing the channel. If the active region expands to completely close the channel, the resistance of the channel from source to drain becomes large, and the FET is effectively ...

  8. Depletion region - Wikipedia

    en.wikipedia.org/wiki/Depletion_region

    A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.

  9. NMOS logic - Wikipedia

    en.wikipedia.org/wiki/NMOS_logic

    This inversion layer, called the n-channel, can conduct electrons between n-type source and drain terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity ...

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