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The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [ 1 ]
Therefore, datasheets will specify threshold voltage according to a specified measurable amount of current (commonly 250 μA or 1 mA). If the gate voltage is above the threshold voltage (right figure), the "enhancement-mode" transistor is turned on, due to there being many electrons in the channel at the oxide-silicon interface, creating a low ...
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3 3D model of TO-3 package. In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits.
Illustration of safe operating area of a bipolar power transistor. Any combination of collector current and voltage below the line can be tolerated by the transistor. SOA is usually presented in transistor datasheets as a graph with V CE (collector-emitter voltage) on the abscissa and I CE (collector-emitter current) on the ordinate ; the safe ...
The popular 2N3055 power transistor in a TO-3 case has an internal thermal resistance from junction to case of 1.52 °C/W. [4] The contact between the device case and heat sink may have a thermal resistance between 0.5 and 1.7 °C/W, depending on the case size and use of grease or insulating mica washer. [3]
In addition to the transistor characteristic curves, the Type 575 is used to display dynamic characteristics of a wide range of semiconductor devices." (Tektronix, Catalog, 1967) A curve tracer is a specialised piece of electronic test equipment used to analyze the characteristics of discrete electronic components , such as diodes , transistors ...
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters . The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be ...