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The only terminal remaining is the source. This is a common-source FET circuit. The analogous bipolar junction transistor circuit may be viewed as a transconductance amplifier or as a voltage amplifier. (See classification of amplifiers). As a transconductance amplifier, the input voltage is seen as modulating the current going to the load.
In electronics, a common-gate amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a current buffer or voltage amplifier. In this circuit, the source terminal of the transistor serves as the input, the drain is the output, and the gate is connected to some DC biasing voltage (i.e. an ...
A mechanical amplifier or a mechanical amplifying element is a linkage mechanism that amplifies the magnitude of mechanical quantities such as force, displacement, velocity, acceleration and torque in linear and rotational systems. [1]
The issue of linearity in a power amplifier can theoretically be mitigated by requiring that the input signal of the power amplifier be "constant envelope", i.e. contain no amplitude variations. In a polar modulation system, the power amplifier input signal may vary only in phase.
To achieve high gain as well as high output swing, multi-stage amplifiers have been invented. To implement two-stage amplifier, one can use FC amplifier as the first stage and a common source amplifier as the second stage. Also, to implement four-stage amplifier, 3 common source amplifier can be cascaded with FC amplifier. [15]
This is a spare in storage. 5 kW klystron tube used as power amplifier in UHF television transmitter, 1952. When installed, the tube projects through holes in the center of the cavity resonators, with the sides of the cavities making contact with the metal rings on the tube.
A microchannel plate is a slab made from resistive material (most often glass) 0.5 to 2mm thick with a regular array of tiny tubes (microchannels) leading from one face to the other. The microchannels are typically 5-20 micrometers in diameter, parallel to each other and enter the plate at a small angle to the surface (8-13° from normal ).
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.