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Theoretical calculations reveal that the mobility in non-polar semiconductors, such as silicon and germanium, is dominated by acoustic phonon interaction. The resulting mobility is expected to be proportional to T −3/2, while the mobility due to optical phonon scattering only is expected to be proportional to T −1/2. Experimentally, values ...
The Transfer Length Method or the "Transmission Line Model" (both abbreviated as TLM) is a technique used in semiconductor physics and engineering to determine the specific contact resistivity between a metal and a semiconductor. [1] [2] [3] TLM has been developed because with the ongoing device shrinkage in microelectronics the relative ...
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + (μB) 2), where μ is the semiconductor mobility (units m 2 ·V −1 ·s −1, equivalently m 2 ·Wb −1, or T −1) and B is the magnetic field (units teslas).
The carrier density is important for semiconductors, where it is an important quantity for the process of chemical doping. Using band theory , the electron density, n 0 {\displaystyle n_{0}} is number of electrons per unit volume in the conduction band.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.