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Individual quantum dots can be created from two-dimensional electron or hole gases present in remotely doped quantum wells or semiconductor heterostructures called lateral quantum dots. The sample surface is coated with a thin layer of resist and a lateral pattern is then defined in the resist by electron beam lithography .
Spin-cast quantum dot solar cell built by the Sargent Group at the University of Toronto. The metal disks on the front surface are the electrical connections to the layers below. A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the captivating photovoltaic material.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The maximum solar cell efficiency reported and certified is 14.6% for a modified formamidinium tin triiodide-based (CH(NH 2) 2 SnI 3 or FAPbI 3) composition with additional NH 4 SCN and PEABr content, [10] 5.73% for CH 3 NH 3 SnIBr 2, [11] 3% for CsSnI 3 (5.03% in quantum dots), and above 10% for various compositions based on formamidinium tin ...
Silicon quantum dots are metal-free biologically compatible quantum dots with photoluminescence emission maxima that are tunable through the visible to near-infrared spectral regions. These quantum dots have unique properties arising from their indirect band gap , including long-lived luminescent excited-states and large Stokes shifts .
Although a good example of CQDs with ~80% quantum yield was synthesized, [33] most of the quantum dots synthesized have a quantum yield below 10% so far. [7] Surface-passivation and doping methods for modifications are usually applied for improving quantum yield.
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
This article refers to the wetting layer connected to the growth of self-assembled quantum dots (e.g. InAs on GaAs). These quantum dots form on top of the wetting layer. The wetting layer can influence the states of the quantum dot for applications in quantum information processing and quantum computation.
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