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Band-bending diagram for p–n diode in forward bias. Diffusion drives carriers across the junction. Quasi-Fermi levels and carrier densities in forward biased p–n-diode. The figure assumes recombination is confined to the regions where majority carrier concentration is near the bulk values, which is not accurate when recombination-generation ...
p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
Band diagram for p–n junction at equilibrium. The depletion region is shaded. φ B denotes band shift for holes and charges level. See P–n diode. The inner workings of a light emitting diode, showing circuit (top) and band diagram when a bias voltage is applied (bottom).
This allows the diode to operate at higher signal frequencies, at the expense of a higher forward voltage drop. Gold-doped diodes are faster than other p–n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p–n diodes). [43] [44] A typical example is the 1N914.
The diagram shows a schematic representation of an NPN transistor connected to two voltage sources. (The same description applies to a PNP transistor with reversed directions of current flow and applied voltage.) This applied voltage causes the lower p–n junction to become forward biased, allowing a flow of electrons from the emitter into the ...
The p-n diode is a device that allows current to flow in only one direction as long as the applied voltage is below a certain threshold. When a forward bias is applied to the p-n junction of the diode the band gap in the depletion region is narrowed. The applied voltage introduces more charge carriers as well, which are able to diffuse across ...
The electron is pushed by this field toward the n side and the hole toward the p side. (This is opposite to the direction of current in a forward-biased diode, such as a light-emitting diode in operation.) When the pair is created outside the space charge zone, where the electric field is smaller, diffusion also acts to move the carriers, but ...
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]