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Once the SCR starts conducting, no more gate voltage is required to maintain it in the ON state. The minimum current necessary to maintain the SCR in the ON state on removal of the gate voltage is called the latching current. There are two ways to turn it off: Reduce the current through it below a minimum value called the holding current, or
The device turns off when the anode voltage falls below a value (relative to the cathode) determined by the device characteristics. When off, it is considered a reverse voltage blocking device. [19] Gate turn-off thyristor (GTO) The gate turn-off thyristor, unlike an SCR, can be turned on and off with a gate pulse.
low SCR: in case of a short circuit, the current is proportional to SCR, therefore generators with low SCR require less protection and thus are cheaper; low SCR allows shorter air gap and lower excitation field, both decreasing the size (an cost) of the generator; with low SCR the amounts of iron and copper are reduced, lowering the cost; high SCR:
A distributed buffer gate turn-off thyristor (DB-GTO) is a thyristor with additional PN layers in the drift region to reshape the field profile and increase the voltage blocked in the off state. Compared to a typical PNPN structure of a conventional thyristor, the DB-GTO thyristor has a PN–PN–PN structure.
They have two MOSFETs of opposite conductivity types in their equivalent circuits. One is responsible for turn-on and the other for turn-off. A thyristor with only one MOSFET in its equivalent circuit, which can only be turned on (like normal SCRs), is called an MOS-gated thyristor. Schematic of a MOSFET-controlled thyristor
In Dc circuit, when Vgk = 0.7v then SCR is fired ( anode-cathode as a closed switch ) we can not turn off SCR because of the latch.However we can connect the external switch to reset SCR. By pressing switch, the current Iak will decrease below a value called holding current Ih then SCR turn off. Ir2 = (Vr2 – 0.7v)/ R2
Here, it becomes important for the supply to pulse on and off at the correct position in the modulation cycle for a known value to be achieved; for example, the controller could turn on at the peak of a waveform or at its base if the cycle's time base were not taken into consideration.
It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. [1] Like the GTO thyristor, the IGCT is a fully controllable power switch, meaning that it can be turned both on and off by its control terminal (the gate). Gate drive electronics are integrated with the thyristor device. [2]