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ZnO creates one of the most diverse range of nanostructures, and there is a great amount of research on different synthesis routes of various ZnO nanostructures. [1] The most common methods to synthesise ZnO structures is using chemical vapor deposition (CVD), which is best used to form nanowires and comb or tree-like structures.
ZnO is a wide-bandgap semiconductor with an energy gap of 3.37 eV at room temperature. [1] ZnO nanoparticles are believed to be one of the three most produced nanomaterials, along with titanium dioxide nanoparticles and silicon dioxide nanoparticles. [2] [3] [4] The most common use of ZnO nanoparticles is in sunscreen.
Most of the synthesized Zinc oxide (ZnO) nanostructures in different geometric configurations such as nanowires, nanorods, nanobelts and nanosheets are usually in the wurtzite crystal structure. However, it was found from density functional theory calculations that for ultra-thin films of ZnO, the graphite-like structure was energetically more ...
Zinc oxide (ZnO) nanorod, also known as nanowire, has a direct bandgap energy of 3.37 eV, which is similar to that of GaN, and it has an excitation binding energy of 60 meV. The optical bandgap of ZnO nanorod can be tuned by changing the morphology , composition, size etc.
The Schottky contact must be formed between the counter electrode and the tip of the nanowire since the ohmic contact will neutralize the electrical field generated at the tip. ZnO nanowire with an electron affinity of 4.5 eV, Pt (φ = 6.1 eV), is a metal sometimes used to construct the
The ZnO nanowire templates are then removed by thermal reduction and evaporation. An analysis using transmission electron microscopy (TEM) shows that ZnO residue, along with a thin film of porous GaN, is still found in the upper portion of the nanotubes after the templates are removed. This is a result of zinc and oxygen coming off of the ...
Most synthesis techniques use a bottom-up approach. Initial synthesis via either method may often be followed by a nanowire thermal treatment step, often involving a form of self-limiting oxidation, to fine tune the size and aspect ratio of the structures. [7] After the bottom-up synthesis, nanowires can be integrated using pick-and-place ...
As a nanowire begins to grow, its height increases by an amount dh and the radius of the contact area decreases by an amount dr (see Figure 4). As the growth continues, the inclination angle at the base of the nanowires (α, set as zero before whisker growth) increases, as does β 0 :