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  2. 10-Methacryloyloxydecyl dihydrogen phosphate - Wikipedia

    en.wikipedia.org/wiki/10-Methacryloyloxydecyl_di...

    [3] 4-Methacryloyloxyethyl trimellitic acid anhydride (4-META) that adheres to not only tooth structures but also dental alloys, was developed almost at the same time. [4] In order to create adhesive monomers having higher performance, investigation and optimization of adhesive monomer molecular structure was carried out.

  3. RCA clean - Wikipedia

    en.wikipedia.org/wiki/RCA_clean

    The optional second step (for bare silicon wafers) is a short immersion in a 1:100 or 1:50 solution of aqueous HF (hydrofluoric acid) at 25 °C for about fifteen seconds, in order to remove the thin oxide layer and some fraction of ionic contaminants. If this step is performed without ultra high purity materials and ultra clean containers, it ...

  4. Adhesive bonding of semiconductor wafers - Wikipedia

    en.wikipedia.org/wiki/Adhesive_bonding_of...

    The adhesive bonding with organic materials, i.e. BCB or SU-8, has simple process properties and the ability to form high aspect ratio micro structures. The bonding procedure is based on polymerization reaction of organic molecules to form long polymer chains during annealing. This cross-link reaction forms BCB and SU-8 to a solid polymer layer ...

  5. Adhesive bonding - Wikipedia

    en.wikipedia.org/wiki/Adhesive_bonding

    Pre-treatment can be used to modify surfaces in a targeted way and thus make them more adhesive. [3] In addition to coating the substrates with an adhesion promoter to enable good adhesion, surfaces can also be modified by various methods to prepare them for gluing. The most common surface pre-treatment methods are listed in the adjacent figure.

  6. Direct bonding - Wikipedia

    en.wikipedia.org/wiki/Direct_bonding

    pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the bonding process is also referred to as silicon direct bonding or silicon fusion bonding.

  7. Plasma-activated bonding - Wikipedia

    en.wikipedia.org/wiki/Plasma-activated_bonding

    Plasma-activated bonding is a derivative, directed to lower processing temperatures for direct bonding with hydrophilic surfaces. The main requirements for lowering temperatures of direct bonding are the use of materials melting at low temperatures and with different coefficients of thermal expansion (CTE) .

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