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PVD process flow diagram. Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from ...
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Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. [1] [2]
TiN has a Vickers hardness of 1800–2100, hardness of 31 ± 4 GPa, [6] a modulus of elasticity of 550 ± 50 GPa, [6] a thermal expansion coefficient of 9.35 × 10 −6 K −1, and a superconducting transition temperature of 5.6 K. [7] [6] TiN oxidizes at 800 °C in a normal atmosphere.
The PVD process can be carried out at lower deposition temperatures and without corrosive products, but deposition rates are typically lower. Electron-beam physical vapor deposition, however, yields a high deposition rate from 0.1 to 100 μm/min at relatively low substrate temperatures, with very high material utilization efficiency. The ...
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Ion plating (IP) is a physical vapor deposition (PVD) process that is sometimes called ion assisted deposition (IAD) or ion vapor deposition (IVD) and is a modified version of vacuum deposition. Ion plating uses concurrent or periodic bombardment of the substrate, and deposits film by atomic-sized energetic particles called ions.