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Memory bandwidth is the rate at which data can be read from or stored into a semiconductor memory by a processor. Memory bandwidth is usually expressed in units of bytes/second , though this can vary for systems with natural data sizes that are not a multiple of the commonly used 8-bit bytes.
Memory hierarchy also greatly affects processor performance, an issue barely considered in IPS calculations. Because of these problems, synthetic benchmarks such as Dhrystone are now generally used to estimate computer performance in commonly used applications, and raw IPS has fallen into disuse.
The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS
The memory controller can begin a read from the second bank while a read from the first bank is in progress, using the two OE signals to only permit one result to appear on the data bus at a time. RAS-only refresh
MemTest86 was developed by Chris Brady in 1994. [1] It was written in C and x86 assembly, and for all BIOS versions, was released under the GNU General Public License (GPL). ). The bootloading code was originally derived from Linux 1.2.
Earlier DIMM generations featured only a single channel and one CA (Command/Address) bus controlling the whole memory module with its 64 (for non-ECC) or 72 (for ECC) data lines. Both subchannels on a DDR5 DIMM each have their own CA bus, controlling 32 bits for non-ECC memory and either 36 or 40 data lines for ECC memory, resulting in a total ...
The physical phenomena on which the device relies (such as spinning platters in a hard drive) will also impose limits; for instance, no spinning platter shipping in 2009 saturates SATA revision 2.0 (3 Gbit/s), so moving from this 3 Gbit/s interface to USB 3.0 at 4.8 Gbit/s for one spinning drive will result in no increase in realized transfer rate.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...