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Once tested, a wafer is typically reduced in thickness in a process also known as "backlap", [118]: 6 "backfinish", "wafer backgrind" or "wafer thinning" [191] before the wafer is scored and then broken into individual dies, a process known as wafer dicing. Only the good, unmarked chips are packaged.
Wafer backgrinding is a semiconductor device fabrication step during which wafer thickness is reduced to allow stacking and high-density packaging of integrated circuits (IC). ICs are produced on semiconductor wafers that undergo a multitude of processing steps.
To ensure good contact of the wafer pair a constant pressure between 2.5 and 4.5 bar during bonding is applied. [3] The frames should be kept above the non-flatness value of the wafer, based on the fact that defects usually are caused by the curvature of the wafer. [3] A shear strength of the bonded wafer pair of about 18 to 25 MPa is ...
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
Wafers grown using materials other than silicon will have different thicknesses than a silicon wafer of the same diameter. Wafer thickness is determined by the mechanical strength of the material used; the wafer must be thick enough to support its own weight without cracking during handling. The tabulated thicknesses relate to when that process ...
The primary application of monocrystalline silicon is in the production of discrete components and integrated circuits.Ingots made by the Czochralski method are sliced into wafers about 0.75 mm thick and polished to obtain a regular, flat substrate, onto which microelectronic devices are built through various microfabrication processes, such as doping or ion implantation, etching, deposition ...
Solar cells, or photovoltaic cells (PV) for producing electric power from sunlight can be grown as thick epi wafers on a monocrystalline silicon "seed" wafer by chemical vapor deposition (CVD), and then detached as self-supporting wafers of some standard thickness (e.g., 250 μm) that can be manipulated by hand, and directly substituted for wafer cells cut from monocrystalline silicon ingots.